• image of Bipolar Transistor Arrays, Pre-Biased>RN4990(TE85L,F)
  • image of Bipolar Transistor Arrays, Pre-Biased>RN4990(TE85L,F)
RN4990(TE85L,F)
NPN + PNP BRT Q1BSR=4.7KOHM Q1BE
-
Tape & Reel (TR)
3000
:
:

1

$0.3696

$0.3696

10

$0.2576

$2.5760

100

$0.1344

$13.4400

500

$0.1008

$50.4000

1000

$0.0784

$78.4000

3000

$0.0672

$201.6000

6000

$0.0672

$403.2000

9000

$0.0560

$504.0000

30000

$0.0560

$1,680.0000

75000

$0.0448

$3,360.0000

150000

$0.0448

$6,720.0000

image of Bipolar Transistor Arrays, Pre-Biased>RN4990(TE85L,F)
image of Bipolar Transistor Arrays, Pre-Biased>RN4990(TE85L,F)
RN4990(TE85L,F)
RN4990(TE85L,F)
Bipolar Transistor Arrays, Pre-Biased
Toshiba Electronic Devices and Storage Corporation
NPN + PNP BRT Q1BSR=4.7KOHM Q1BE
-
Tape & Reel (TR)
90
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrToshiba Electronic Devices and Storage Corporation
Series-
PackageTape & Reel (TR)
Product StatusACTIVE
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max200mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 5V
Frequency - Transition250MHz, 200MHz
Resistor - Base (R1)4.7kOhms
Supplier Device PackageUS6
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